Semiconductor device and method of manufacturing semiconductor device

ABSTRACT

A semiconductor device includes a semiconductor substrate in which a first region having a freewheeling diode arranged therein, second regions having an IGBT arranged therein, and a withstand-voltage retention region surrounding the first region and the second regions in plan view are defined. The semiconductor substrate has a first main surface and a second main surface. The semiconductor substrate includes an anode layer having a first conductivity type, which is arranged in the first main surface of the first region, and a diffusion layer having the first conductivity type, which is arranged in the first main surface of the withstand-voltage retention region adjacently to the anode layer. A first trench is arranged in the first main surface on a side of the anode layer with respect to a boundary between the anode layer and the diffusion layer.

FIELD OF THE INVENTION

The present invention relates to a semiconductor device such as a powersemiconductor device and a method of manufacturing the semiconductordevice.

DESCRIPTION OF THE BACKGROUND ART

A power device as a power semiconductor device is used in a wide rangeof fields such as the fields of home electronic appliances, electricvehicles, and railroads and the fields of solar photovoltaic powergeneration and wind power generation that have been attracting moreattention as power generation of renewable energy. In those fields, aninductive load of an induction motor or the like is driven by aninverter circuit constructed by a power device in many cases. In aconfiguration of driving an inductive load, a freewheeling diode(hereinafter referred to as an “FWD”) for circulating a currentgenerated due to a counter-electromotive force of an inductive toad isprovided. Note that, a typical inverter circuit is formed of a pluralityof insulated gate bipolar transistors (hereinafter referred to as“IGBTs”) and a plurality of FWDs.

However, the inverter circuit is largely desired to be reduced in size,weight, and cost, and thus it is not desirable to mount a plurality ofIGBTs and a plurality of FWDs on the inverter circuit individually. Asone countermeasure thereof, an IGBT of a reverse conducting type(hereinafter referred to as an “RC-IGBT”) that integrates the IGBT andthe FWD has been developed, and the configuration with the above appliedthereto enables reduction of the mounting area of the semiconductordevice and reduction in cost.

In the RC-IGBT, a p-type collector layer as an IGBT and an n-typecathode layer as an FWD are arranged in a surface only having arrangedtherein a p-type collector layer of a typical IGBT that does not havereverse conducting property. Further, in a surface opposite to such asurface of the RC-IGBT, a p-type base layer as the IGBT, a p-type anodelayer as the FWD, and a p-type diffusion layer of a withstand-voltageretention region surrounding those layers in plan view are arranged.Note that, the RC-IGBT is disclosed in, for example, Takahashi H, et al,“1200V Reverse Conducting IGBT”, Proceedings of ISPSD, 2004, p. 133-136,Japanese Patent Application Laid-Open No. 2008-53648, Japanese PatentApplication Laid-Open No. 2008-103590, and Japanese Patent ApplicationLaid-Open No. 2008-109028.

However, in the RC-IGBT, a recovery current being an opposite current toa current usually supposed to flow as a diode (forward current) flowswhen the FWD is turned into an off state from an on state, and there hasbeen a problem in that the recovery current becomes a cause of energyloss.

SUMMARY

The present invention is made in view of the problems as describedabove, and has an object to provide a technology capable of reducing arecovery current.

The present invention provides a semiconductor device including asemiconductor substrate, a surface electrode, and a back-surfaceelectrode. The semiconductor substrate has a first main surface and asecond main surface, and a first region having a freewheeling diodearranged therein, second regions having an insulated gate bipolartransistor (IGBT) arranged therein, and a withstand-voltage retentionregion surrounding the first region and the second regions in plan vieware defined in the semiconductor substrate. The surface electrode isarranged on the first main surface of the first region, of the secondregions, and of the withstand-voltage retention region. The back-surfaceelectrode is arranged on the second main surface of the first region, ofthe second regions, and of the withstand-voltage retention region. Thesemiconductor substrate includes an anode layer having a firstconductivity type, a diffusion layer having the first conductivity type,and a cathode layer having a second conductivity type. The anode layeris arranged in the first main surface of the first region. The diffusionlayer is arranged in the first main surface of the withstand-voltageretention region adjacently to the anode layer. The cathode layer isarranged in the second main surface of the first region. A first trenchis arranged in the first main surface on a side of the anode layer withrespect to a boundary between the anode layer and the diffusion layer.

According to the present invention, the first trench is arranged in thefirst main surface on the side of the anode layer with respect to theboundary between the anode layer and the diffusion layer. With this, itis possible to reduce the recovery current.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view for illustrating configuration of asemiconductor device according to a first preferred embodiment of thepresent invention.

FIG. 2 is a plan view for illustrating configuration of thesemiconductor device according to a second preferred embodiment of thepresent invention.

FIG. 3 is a sectional view for illustrating configuration of thesemiconductor device according to a third preferred embodiment of thepresent invention.

FIG. 4 is a sectional view for illustrating configuration of thesemiconductor device according to a fourth preferred embodiment of thepresent invention.

FIG. 5 is a sectional view for illustrating configuration of thesemiconductor device according to a fifth preferred embodiment of thepresent invention.

FIG. 6 is a sectional view for illustrating configuration of thesemiconductor device according to a sixth preferred embodiment of thepresent invention.

FIG. 7 is a plan view for illustrating configuration of thesemiconductor device according to a seventh preferred embodiment of thepresent invention.

FIG. 8 is a sectional view for illustrating the configuration of thesemiconductor device according to the seventh preferred embodiment.

FIG. 9 is a plan view for illustrating configuration of a relatedsemiconductor device.

FIG. 10 is a sectional view for illustrating the configuration of therelated semiconductor device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

<Related Semiconductor Device>

First, prior to giving description of a semiconductor device accordingto preferred embodiments of the present invention, a power semiconductordevice related thereto (hereinafter referred to as a “relatedsemiconductor device”) is described.

FIG. 9 is a plan view for illustrating configuration of a relatedsemiconductor device, and FIG. 10 is a sectional view for illustratingthe configuration taken along the line A1-A2 of FIG. 9.

As illustrated in FIG. 9, the related semiconductor device includes asemiconductor substrate 11 in which an FWD region 1 being a first regionhaving an FWD arranged therein, IGBT regions 2 each being a secondregion having an IGBT arranged therein, and a withstand-voltageretention region 3 are defined. The two IGBT regions 2 interpose the FWDregion 1 therebetween in plan view, and the withstand-voltage retentionregion 3 surrounds the FWD region 1 and the two IGBT regions 2 in planview. Further, the related semiconductor device includes a gate pad 51arranged in the IGBT region 2.

Description is hereinafter given assuming that a first conductivity typeis an n-type and a second conductivity type is a p-type. Further,description is hereinafter given assuming that a first main surface ofthe semiconductor substrate 11 is an upper surface of the semiconductorsubstrate 11 of FIG. 10, which encompasses each upper surface of the FWDregion 1, the IGBT regions 2, and the withstand-voltage retention region3, and that a second main surface of the semiconductor substrate 11 is alower surface of the semiconductor substrate 11 of FIG. 10, whichencompasses each lower surface of the FWD region 1, the IGBT regions 2,and the withstand-voltage retention region 3.

As illustrated in FIG. 10, the semiconductor substrate 11 of the relatedsemiconductor device includes an n-type drift layer 12, a p-type anodelayer 13, a first p-type diffusion layer 14 being a diffusion layer, ann-type buffer layer 15, an n-type cathode layer 16, and a second p-typediffusion layer 17. Further, although not shown, the semiconductorsubstrate 11 includes components of an IGBT such as an n-type emitterlayer, a p-type base layer, and a p-type collector layer, for example.

The n-type drift layer 12 has relatively low n-type impurityconcentration, and is arranged across the FWD region 1, the IGBT regions2, and the withstand-voltage retention region 3.

The p-type anode layer 13 of the FWD is arranged in the upper surface ofthe FWD region 1, and is arranged on an upper surface of the n-typedrift layer 12.

The n-type emitter layer and the p-type base layer of the IGBT (notshown) are arranged in the upper surface of the IGBT region 2, and arearranged on the upper surface of the n-type drift layer 12. Those n-typeemitter layer and p-type base layer form a metal oxide semiconductorfield effect transistor (MOSFET) being a part of the IGBT. Further, thep-type base layer of the IGBT is arranged adjacently to the p-type anodelayer 13 of the FWD.

The first p-type diffusion layer 14 is arranged in the upper surface ofthe withstand-voltage retention region 3, and is arranged on the uppersurface of the n-type drift layer 12. Further, the first p-typediffusion layer 14 is arranged adjacently to the p-type anode layer 13of the FWD. Further, p-type impurity concentration of the first p-typediffusion layer 14 is higher than the impurity concentration of thep-type anode layer 13, and the first p-type diffusion layer 14 is deeperthan the impurity of the p-type anode layer 13. Note that, a boundarybetween the first p-type diffusion layer 14 and the p-type anode layer13 corresponds to a boundary between the withstand-voltage retentionregion 3 and the FWD region 1, and the vertically extending dotted lineillustrated in FIG. 10 indicates a boundary of an injection region atthe time of forming the first p-type diffusion layer 14, that is, aboundary between a mask and an opening region.

The n-type buffer layer 15 is arranged in the lower surfaces of the FWDregion 1, the IGBT regions 2, and the withstand-voltage retention region3, and is arranged on a lower surface of the n-type drift layer 12.N-type impurity concentration of the n-type buffer layer 15 is higherthan the impurity concentration of the n-type drift layer 12.

The n-type cathode layer 16 of the FWD is arranged in the lower surfaceof the FWD region 1, and is arranged on a lower surface of the n-typebuffer layer 15. N-type impurity concentration of the n-type cathodelayer 16 is higher than the impurity concentration of the n-type bufferlayer 15.

The p-type collector layer of the IGBT is arranged in the lower surfaceof the IGBT region 2, and is arranged on the lower surface of the n-typebuffer layer 15. Further, the p-type collector layer of the IGBT isarranged adjacently to the n-type cathode layer 16 of the FWD.

The second p-type diffusion layer 17 is arranged in the lower surface ofthe withstand-voltage retention region 3, and is arranged on the lowersurface of the n-type buffer layer 15. Further, the second p-typediffusion layer 17 is arranged adjacently to the n-type cathode layer 16of the FWD. In the related semiconductor device, an end portion of thesecond p-type diffusion layer 17 on the FWD region 1 side protrudes tothe FWD region 1. A length PW between the end portion of the secondp-type diffusion layer 17 on the FWD region 1 side and the verticallyextending dotted line illustrated in FIG. 10 is set to be larger than athickness of a portion of the n-type drift layer 12 below the firstp-type diffusion layer 14. With this, it is possible to prevent carriersfrom reaching the n-type cathode layer 16 from the first p-typediffusion layer 14 passing through the n-type drift layer 12. Note that,the second p-type diffusion layer 17 forms a field limiting ring (FLR)structure, a reduced surface field (RESURF) structure, or the like.However, description of the detailed configuration thereof is hereinomitted.

The related semiconductor device includes, in addition to theabove-mentioned semiconductor substrate 11, interlayer insulation films21 and 23, a gate electrode layer 22 formed of polysilicon, a surfaceelectrode 24, and a back-surface electrode 25.

The interlayer insulation film 21 is arranged in an end portion of thesemiconductor substrate 11. The gate electrode layer 22 is arranged onthe interlayer insulation film 21, and the interlayer insulation film 23covers the gate electrode layer 22.

The surface electrode 24 is arranged on the upper surfaces of the FWDregion 1, of the IGBT regions 2, and of the withstand-voltage retentionregion 3, and is electrically coupled to the gate pad 51 of FIG. 9. Theback-surface electrode 25 is arranged on the lower surfaces of the FWDregion 1, of the IGBT regions 2, and of the withstand-voltage retentionregion 3.

The related semiconductor device configured as described above functionsas an RC-IGBT. Specifically, in a case where the IGBT is in an on state,a current flows from the p-type collector layer toward the n-typeemitter layer (current from the lower side toward the upper side in FIG.10). In a case where the IGBT is turned into an off state from the onstate, a reverse voltage is applied to the RC-IGBT due to an inductiveload (not shown) coupled to the RC-IGBT. As a result, the surfaceelectrode 24 side has a high potential to turn the FWD into the onstate, causing a current to flow from the p-type anode layer 13 towardthe n-type cathode layer 16 (current from the upper side toward thelower side in FIG. 10), that is, causing a current to flow in a reversedirection to the case where the IGBT is in the on state. The reversevoltage is released in such a manner, thereby preventing a failurecaused by the reverse voltage and effectively utilizing the reversevoltage in the inductive load.

Next, when the FWD is switched to the off state from the on state, whichis caused by the IGBT being switched to the on state from the off state,a recovery current adversely continues to flow awhile in a reversedirection to the current having flowed when the FWD is in the on state,due to carriers such as holes of the p-type anode layer 13 that havebeen injected. The recovery current is in the same direction as thecurrent that is supposed to flow in the RC-IGBT in a case where the IGBTis in the on state, thus being a cause of energy loss.

Particularly, in the above-mentioned related semiconductor device, thefirst p-type diffusion layer 14 having comparatively high concentrationis arranged adjacently to the p-type anode layer 13. With such aconfiguration, when the IGBT is switched to the on state from the offstate and the FWD is switched to the off state from the on state, holesare injected into the p-type anode layer 13 from the first p-typediffusion layer 14. As a result, holes that are supposed to bedischarged increase, and thus a current in a reverse direction to amoving direction of the holes, that is, a recovery current indicated byan arrow Irr of FIG. 10 adversely increases. As a countermeasurethereof, it is possible to reduce the recovery current by providing thesecond p-type diffusion layer 17 in the lower surface of thewithstand-voltage retention region 3, or making the second p-typediffusion layer 17 to protrude to the FWD region 1. However, furtherreduction of the recovery current is desired. In view of the above, asin the description below, with a semiconductor device according to firstto seventh preferred embodiments of the present invention, it ispossible to reduce the recovery current.

First Preferred Embodiment

FIG. 1 is a sectional view for illustrating configuration of asemiconductor device according to a first preferred embodiment of thepresent invention. In the following, out of components to be describedin this first preferred embodiment, components that are the same orsimilar to the components already described in the related semiconductordevice are denoted by the same reference symbols, and differentcomponents are mainly described.

As illustrated in FIG. 1, in a semiconductor device according to thisfirst preferred embodiment, a first trench 31 is arranged in the uppersurface of the semiconductor substrate 11 on a side of the p-type anodelayer 13 with respect to the boundary between the p-type anode layer 13and the first p-type diffusion layer 14. That is, the first trench 31 isnot brought into contact with the first p-type diffusion layer 14, andis arranged in a portion of the p-type anode layer 13 on the firstp-type diffusion layer 14 side. Note that, in this first preferredembodiment, the first trench 31 is formed similarly to a gate electrodestructure (not shown) formed at least in the FWD region 1 and the IGBTregions 2. For this reason, inside the first trench 31, an electrodelayer that is the same as the gate electrode layer is arranged withintermediation of an insulation film that is the same as the gateinsulation film.

According to the semiconductor device of this first preferred embodimentas described above, when the FWD is switched to the off state from theon state, it is possible to prevent holes from being injected into thep-type anode layer 13 from the first p-type diffusion layer 14. As aresult, it is possible to reduce the recovery current flowing from thefirst p-type diffusion layer 14 through intermediation of the p-typeanode layer 13 to the n-type cathode layer 16.

Note that, in this first preferred embodiment, the semiconductorsubstrate 11 may be formed of a semiconductor such as silicon (Si), ormay be formed of a wide-bandgap semiconductor such as silicon carbide(SiC), gallium nitride (GaN), and diamond. This is similarly applicablealso in a second preferred embodiment and the following preferredembodiments of the present invention.

Second Preferred Embodiment

FIG. 2 is a plan view for illustrating configuration of thesemiconductor device according to a second preferred embodiment of thepresent invention. In the following, out of components to be describedin this second preferred embodiment, components that are the same orsimilar to the components already described in the related semiconductordevice are denoted by the same reference symbols, and differentcomponents are mainly described.

As illustrated in FIG. 2, in the semiconductor device according to thissecond preferred embodiment, a second trench 32 crossing with the firsttrench 31 is arranged in the p-type anode layer 13. Note that, insidethe second trench 32, similarly to the first trench 31, an electrodelayer that is the same as the gate electrode layer is arranged withintermediation of an insulation film that is the same as the gateinsulation film.

According to the semiconductor device of this second preferredembodiment as described above, an electric field concentrated on a lowerside of the first trench 31 is dispersed on a lower side of the secondtrench 32. With this, it is possible to prevent an electric field frombeing concentrated in the trench, thereby being possible to enhanceproperty of withstanding voltage and prevent deficiency of the trench.

Third Preferred Embodiment

FIG. 3 is a sectional view for illustrating configuration of thesemiconductor device according to a third preferred embodiment of thepresent invention. In the following, out of components to be describedin this third preferred embodiment, components that are the same orsimilar to the components already described in the related semiconductordevice are denoted by the same reference symbols, and differentcomponents are mainly described.

In the semiconductor device according to this third preferredembodiment, p-type impurity concentration of the p-type anode layer 13decreases as approaching to the first p-type diffusion layer 14. Notethat, as a method of forming an impurity layer having concentrationgradients to be the p-type anode layer 13, a commonly known method ofvariation of lateral doping (VLD) may be used, for example, or othermethods may be used as well.

According to the semiconductor device of this third preferred embodimentas described above, the p-type anode layer 13 has concentrationgradients, thereby being possible to raise resistance 33 between thep-type anode layer 13 and the first p-type diffusion layer 14 asindicated by the imaginary line of FIG. 3. With this, it is possible toreduce the recovery current flowing from the first p-type diffusionlayer 14 through intermediation of the p-type anode layer 13 to then-type cathode layer.

Fourth Preferred Embodiment

FIG. 4 is a sectional view for illustrating configuration of thesemiconductor device according to a fourth preferred embodiment of thepresent invention. In the following, out of components to be describedin this fourth preferred embodiment, components that are the same orsimilar to the components already described in the related semiconductordevice are denoted by the same reference symbols, and differentcomponents are mainly described.

As illustrated in FIG. 4, in the semiconductor device according to thisfourth preferred embodiment, the surface electrode 24 is arranged on anupper side of the withstand-voltage retention region 3, and is out ofcontact with the first p-type diffusion layer 14. Here, an end portionof the interlayer insulation film 23 on the FWD region 1 side protrudesto the FWD region 1, and the surface electrode 24 and the first p-typediffusion layer 14 are separated apart by the protruding portion. Notethat, the surface electrode 24 is arranged on the FWD region 1 and theIGBT regions 2, and is brought into contact with the p-type anode layer13, the p-type base layer, and the n-type emitter layer.

According to the semiconductor device of this fourth preferredembodiment as described above, it is possible to prevent generation ofholes being carriers in the first p-type diffusion layer 14 when the FWDis in the on state. For this reason, when the FWD is switched to the offstate from the on state, it is possible to prevent the holes from beinginjected into the p-type anode layer 13 from the first p-type diffusionlayer 14, thereby being possible to reduce the recovery current.

Fifth Preferred Embodiment

FIG. 5 is a sectional view for illustrating configuration of thesemiconductor device according to a fifth preferred embodiment of thepresent invention. In the following, out of components to be describedin this fifth preferred embodiment, components that are the same orsimilar to the components already described in the semiconductor deviceaccording to the fourth preferred embodiment are denoted by the samereference symbols, and different components are mainly described.

As illustrated in FIG. 5, in the semiconductor device according to thisfifth preferred embodiment, the p-type anode layer 13 and the firstp-type diffusion layer 14 are separated apart by a portion of the n-typedrift layer 12, and the portion of the n-type drift layer 12 isseparated apart from the surface electrode 24 by the protruding portionof the interlayer insulation film 23.

According to the semiconductor device of this fifth preferred embodimentas described above, it is possible to raise resistance 34 between thep-type anode layer 13 and the first p-type diffusion layer 14 asindicated by the imaginary line of FIG. 5. With this, it is possible toreduce the recovery current flowing from the first p-type diffusionlayer 14 through intermediation of the p-type anode layer 13 to then-type cathode layer.

Sixth Preferred Embodiment

FIG. 6 is a sectional view for illustrating configuration of thesemiconductor device according to a sixth preferred embodiment of thepresent invention. In the following, out of components to be describedin this sixth preferred embodiment, components that are the same orsimilar to the components already described in the semiconductor deviceaccording to the fourth preferred embodiment are denoted by the samereference symbols, and different components are mainly described.

As illustrated in FIG. 6, the semiconductor substrate 11 according tothis sixth preferred embodiment further includes a separating region 35having an n-type. The separating region 35 is interposed between thep-type anode layer 13 and the first p-type diffusion layer 14, and isarranged on the upper surface of the semiconductor substrate 11. Anupper portion of the separating region 35 is separated apart from thesurface electrode 24 by the protruding portion of the interlayerinsulation film 23. Note that, in this sixth preferred embodiment,n-type impurity concentration of the separating region 35 is higher thanthe impurity concentration of the n-type drift layer 12.

According to the semiconductor device of this sixth preferred embodimentas described above, due to the formation of the separating region 35,manufacturing steps are increased in comparison to the fifth preferredembodiment. However, it is possible to cause a resistance value ofresistance 36 between the p-type anode layer 13 and the first p-typediffusion layer 14 as partially indicated by the imaginary line of FIG.6 to be an intended value. With this, it is possible to reduce therecovery current appropriately.

Seventh Preferred Embodiment

FIG. 7 is a plan view for illustrating configuration of thesemiconductor device according to a seventh preferred embodiment of thepresent invention, and FIG. 8 is a sectional view for illustrating theconfiguration. In the following, out of components to be described inthis seventh preferred embodiment, components that are the same orsimilar to the components already described in the related semiconductordevice are denoted by the same reference symbols, and differentcomponents are mainly described.

As illustrated in FIG. 7 and FIG. 8, in the semiconductor deviceaccording to this seventh preferred embodiment, the first p-typediffusion layer 14 includes a plurality of selective injection layers 14a and a semiconductor layer 14 b having the plurality of selectiveinjection layers 14 a arranged therein. As illustrated in FIG. 7, theplurality of selective injection layers 14 a of a quadrangular shape arearranged in a zigzag pattern along a circumferential direction of thewithstand-voltage retention region 3, and as illustrated in FIG. 8, theselective injection layers 14 a are arranged on an upper portion of thesemiconductor layer 14 b. Note that, shapes, positions, and ranges ofthe plurality of selective injection layers 14 a are not limited tothose illustrated in FIG. 7 and FIG. 8.

In this seventh preferred embodiment, the first p-type diffusion layer14 is formed in such a manner that impurity is selectively injectedwithin a region in which the first p-type diffusion layer 14 is to beformed. With this, impurity is injected into the plurality of selectiveinjection layers 14 a, but impurity is not injected into thesemiconductor layer 14 b. However, the impurity of the plurality ofselective injection layers 14 a is diffused to the semiconductor layer14 b due to thermal diffusion or the like. For this reason, generally,the impurity concentration of the semiconductor layer 14 b is lower thanthe impurity concentration of the selective injection layers 14 a. Notethat, change in impurity concentration along a direction from one of theselective injection layers 14 a and the semiconductor layer 14 b toanother may be steep or may be gentle. In this seventh preferredembodiment configured as described above, the first p-type diffusionlayer 14 has uneven impurity concentration.

According to the semiconductor device of this seventh preferredembodiment as described above, it is possible to have mean impurityconcentration in the entire first p-type diffusion layer 14 lower thanthe impurity concentration of the selective injection layers 14 a. Withthis, it is possible to prevent the generation of the holes in the firstp-type diffusion layer 14 when the FWD is in the on state, thereby beingpossible to reduce the recovery current.

Note that, in the present invention, each of the preferred embodimentsand each of the modified examples may be freely combined, and each ofthe preferred embodiments and each of the modified examples may beappropriately modified or omitted within the scope of the invention.

While the invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous modifications andvariations can be devised without departing from the scope of theinvention.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor substrate in which a first region having a freewheelingdiode arranged therein, second regions having an insulated gate bipolartransistor (IGBT) arranged therein, and a withstand-voltage retentionregion surrounding said first region and said second regions in planview are defined, said semiconductor substrate having a first mainsurface and a second main surface; a surface electrode arranged on saidfirst main surface of said first region, of said second regions, and ofsaid withstand-voltage retention region; and a back-surface electrodearranged on said second main surface of said first region, of saidsecond regions, and of said withstand-voltage retention region, saidsemiconductor substrate further comprising: an anode layer having afirst conductivity type, which is arranged in said first main surface ofsaid first region; a diffusion layer having said first conductivitytype, which is arranged in said first main surface of saidwithstand-voltage retention region adjacently to said anode layer; and acathode layer having a second conductivity type, which is arranged insaid second main surface of said first region, wherein a first trench isarranged in said first main surface on a side of said anode layer withrespect to a boundary between said anode layer and said diffusion layer.2. The semiconductor device according to claim 1, wherein a secondtrench crossing with said first trench is arranged in said anode layer.3. A semiconductor device, comprising: a semiconductor substrate inwhich a first region having a freewheeling diode arranged therein,second regions having an insulated gate bipolar transistor (IGBT)arranged therein, and a withstand-voltage retention region surroundingsaid first region and said second regions in plan view are defined, saidsemiconductor substrate having a first main surface and a second mainsurface; a surface electrode arranged on said first main surface of saidfirst region and of said second regions; and a back-surface electrodearranged on said second main surface of said first region, of saidsecond regions, and of said withstand-voltage retention region, saidsemiconductor substrate further comprising: an anode layer having afirst conductivity type, which is arranged in said first main surface ofsaid first region; a diffusion layer having said first conductivitytype, which is arranged in said first main surface of saidwithstand-voltage retention region adjacently to said anode layer; and acathode layer having a second conductivity type, which is arranged insaid second main surface of said first region, wherein said surfaceelectrode is out of contact with said diffusion layer.
 4. A method ofmanufacturing a semiconductor device, said semiconductor devicecomprising: a semiconductor substrate in which a first region having afreewheeling diode arranged therein, second regions having an insulatedgate bipolar transistor (IGBT) arranged therein, and a withstand-voltageretention region surrounding said first region and said second regionsin plan view are defined, said semiconductor substrate having a firstmain surface and a second main surface; a surface electrode arranged onsaid first main surface of said first region, of said second regions, ofand said withstand-voltage retention region; and a back-surfaceelectrode arranged on said second main surface of said first region,said of second regions, and of said withstand-voltage retention region,said semiconductor substrate further comprising: an anode layer having afirst conductivity type, which is arranged in said first main surface ofsaid first region; a diffusion layer having said first conductivitytype, which is arranged in said first main surface of saidwithstand-voltage retention region adjacently to said anode layer; and acathode layer having a second conductivity type, which is arranged insaid second main surface of said first region, the method comprisingforming said diffusion layer in such a manner that impurity isselectively injected within a region in which said diffusion layer is tobe formed.